CESD5V0J4 esd protection diode sot-353 description the CESD5V0J4 is designed to protect voltage sensitive components from esd. excellent cl amping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, it is suited for use in cellular phones, mp3 players, digita l cameras and many other portable applications where board s pace is at a premium. features z low leakage z response time is typically < 1 ns z esd rating of class 3 (> 16 kv) p er human body model z iec61000 ? 4 ? 2 level 4 esd protection z these are pb ? free devices maximum ratings @t a =25 parameter symbol limit unit iec61000 ? 4 ? 2(esd) air contact 15 15 kv esd v oltage per human body model per machine model 16 400 kv v peak power dissipation @ 8 x 20 ms @ta 25c (note 1) p pk 100 w steady state power -- 1 diode (note 2) p d 200 mw thermal resistance junction ? to ? ambient r ja 625 /w lead solder temperature ? maximum (10 second duration) t l 260 junction and storage t emperature r ange t j, t stg -55 ~ +150 stresses exceeding m aximum r atings may damage the device. maximum r atings are stress ratings only. functional operation above the r eco mmended. operating c onditions is no t implied. extended exposure to stresses above the r ecommended o perating c ond itions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. electrical characteristics (t a = 25c unless otherwise noted, v f = 0.9 v max. @ i f = 10ma for all types) v rwm (v) i r ( a) @ v rwm v br (v) @ i t i t v f (v) @i f =200ma v c (v) @max i pp =5a c (pf) device device marking max max min max ma max max max CESD5V0J4 12 5.0 5 6.0 7.2 1.0 1.25 12.5 35 1. non--repetitive current per fi gure 1. derate per figure 2. 2. only 1 diode under power. for all 4 diodes under power, p d will be 25%. mounted on fr--4 board with min pad. 3 2 1 4 5 so t - 35 3 plastic-encapsulate diodes 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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